Method for electrical connections to silicon and an improved...

Details Method for electrical connections to silicon and an improved... Method for electrical connections to silicon and an improved...

H - Electricity

01

L

356/172

H01L 23/48 (2006.01) H01L 21/20 (2006.01)

Patent

CA 1208809

ABSTRACT A method for producing an improved NPN semiconductor device which has a titanium-tungsten barrier metal only in the N type emitter contact windows is disclosed. A semiconductor wafer first undergoes the washed emitter process with the result that the N type collector and emitter contact windows are exposed to bare silicon and the P type contact windows are covered by a layer of silicon dioxide. The P type contact windows are then opened with the result that the N type collector and emitter contact windows, and the P type contact windows are exposed to bare silicon. The titanium-tungsten layer is then deposited across the wafer. The titanium-tungsten layer is patterned by etching so that titanium-tungsten remains in the N type emitter contact windows only. An aluminum metalization layer is then applied and defined with the result that barrier metal is provided between the aluminum signal lines and the N type emitter contact windows only.

456034

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