Method for eliminating defects from semiconductor materials

Details Method for eliminating defects from semiconductor materials Method for eliminating defects from semiconductor materials

H - Electricity

01

L

H01L 21/324 (2006.01) C30B 33/00 (2006.01) C30B 29/10 (2006.01)

Patent

CA 2680551

Using a helium cryostat, the temperature for a substrate wafer(s) is reduced to 2.2 Kelvin for twenty-four hours. A soak segment will hold the temperature of the substrate wafer at 2.2 Kelvins for ninety-six hours. At such temperatures, alloys such as GaAs, InP, and GaP will form dipole molecular moments, which will re-align along lines of internal magnetic force as molecular bonds condense. The substrate wafer's temperature is ramped up to room temperature over twenty-four hours. The temperature of the substrate wafer is ramped up to assure that the temperature gradients made to occur within the wafer are kept low. Typically, a temper ramp up temperature will range between 300° F to 1100° F and depends upon the single crystal material used to construct the substrate wafer. The substrate wafer undergoes a temper hold segment, which assures that the entire substrate wafer has had the benefit of the tempering temperature.

En utilisant un cryostat à l'hélium, la température d'une plaquette de substrat est réduite à 2,2 Kelvin pendant 24 heures. Un palier maintient la température de la plaquette de substrat à 2,2 Kelvin pendant 96 heures. A de telles températures, des alliages tels que GaAs, InP, et GaP forment des moments moléculaires dipolaires qui se réalignent le long de lignes de forces magnétiques internes alors que les liaisons moléculaires condensent. La température de la plaquette de substrat est augmentée progressivement jusqu'à la température ambiante sur une période de 24 heures. La température de la plaquette de substrat est augmentée progressivement afin de s'assurer que les gradients de température qui peuvent exister au sein de celle-ci sont maintenus à un bas niveau. En particulier, une montée de température de trempe se situe entre 300° F et 1100° F et dépend du matériau monocristallin utilisé pour construire la plaquette de substrat. La plaquette de substrat subit un palier de trempe, qui assure que la plaquette de substrat entière a bénéficié de la température de trempe.

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