H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/178
H01L 21/20 (2006.01) C30B 19/06 (2006.01) C30B 19/08 (2006.01) C30B 19/10 (2006.01) H01L 21/208 (2006.01)
Patent
CA 1072220
ABSTRACT OF THE DISCLOSURE: Thin epitaxial layers of Group III-V semi- conductor materials are grown from solution with improved thickness reproducibility and surface smoothness by a method including the steps of preparing an ideally saturated solution of the semiconductor material in a metal melt preferably by keeping an undersaturated solution in contact with the crystalline semiconductor material at a predetermined tempera- ture, supercooling the saturated solution and then bringing the supercooled solution into contact with a substrate. A growth boat assembly for this method has at least one set of two boats slidably stacked one upon another, wherein the upper boat has a solution reservoir and the lower boat has two depressions respectively for receiving therein the sub- strate and the crystalline semi-conductor material as the source material at the saturation step, arranged such that a solution contained in the reservoir can selectively be contacted with either of the source material and the substrate and isolated from both.
250577
Hara Tohru
Mihara Minoru
Toyoda Nobuyuki
LandOfFree
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