Method for etching

Details Method for etching Method for etching

C - Chemistry, Metallurgy

23

F

C23F 1/16 (2006.01) C09K 13/04 (2006.01) C23F 1/02 (2006.01) H01L 31/18 (2006.01)

Patent

CA 2320051

Method for etching metal oxide films, especially tin oxide on a substrate in which a metal (Zn) is deposited on said film and etching is performed by a mixture of an acid, such as hydrochloric acid (HCl) and a metal dissolution agent, such as ferric chloride. The hydrochloric acid reacts with the zinc to produce active hydrogen which reduces the tin oxide to tin, which in turn is etched with the hydrochloric acid.

L'invention a trait à un procédé d'attaque chimique de couches minces d'oxyde métallique, notamment de l'oxyde d'étain, sur un substrat dans lequel un métal (Zn) est déposé sur ladite couche mince et l'attaque chimique est exécuté à l'aide d'un mélange d'un acide, tel que l'acide chlorhydrique (HCl) et d'un agent de dissolution métallique, tel que le chlorure ferrique. L'acide chlorhydrique réagit avec le zinc pour produire de l'hydrogène actif réduisant l'oxyde d'étain en étain, lequel à son tour est attaqué par l'acide chlorhydrique.

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