Method for examining a specimen in a particle beam instrument

Details Method for examining a specimen in a particle beam instrument Method for examining a specimen in a particle beam instrument

H - Electricity

01

J

358/11

H01J 37/30 (2006.01) H01J 37/244 (2006.01) H01J 37/28 (2006.01)

Patent

CA 1317035

ABSTRACT OF THE DISCLOSURE For localization of the defects on mask and wafers generated by particle occupation, electron-optical imaging methods have been developed when the subject to be examined is scanned with a focused electron beam. Since the signal-to-noise ratio needed for a reliable defect recognition limits the scan rate, the throughput of inspected subjects remains low. It is therefore proposed that the subject be scanned with a line-shaped electron probe and that the triggered secondary electrons be imaged onto a detector with the assistance of an electron optics comprising an emersion lens, whereby one line element of the surface region illuminated by the electron probe is assigned to each detector element.

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