Method for fabricating a semiconductor component having a...

Details Method for fabricating a semiconductor component having a... Method for fabricating a semiconductor component having a...

H - Electricity

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L

H01L 21/335 (2006.01) H01L 21/285 (2006.01) H01L 21/338 (2006.01)

Patent

CA 2433734

The invention relates to a method for producing a semiconductor component comprising a contact electrode with a T-shaped cross-section, in particular a field effect transistor with a T-gate. According to the invention, a spacer configured on the edge of the material allows a self-adjusting placement of the gate base and gate head.

L'invention concerne un procédé pour fabriquer un composant semi-conducteur comportant une électrode de contact à section en forme de T, notamment un transistor à effet de champ avec porte en T. Selon l'invention, l'utilisation d'un écarteur façonné sur le bord du matériau permet de réaliser un positionnement autoréglable du pied de porte et de la tête de porte.

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