Method for fabricating a silicon force transducer

Details Method for fabricating a silicon force transducer Method for fabricating a silicon force transducer

G - Physics

01

L

356/25, 73/8

G01L 1/14 (2006.01) G01L 9/00 (2006.01) H01L 27/20 (2006.01)

Patent

CA 1288172

-17- Abstract of the Disclosure A silicon substrate having {100} nominal crystalline planes is anisotropically etched to form a pair of V-shaped grooves along the top planar surface and a first plate between the grooves. The top planar surface is then doped to form a conductor region including the first plate. A substantially uniform layer of a selectively etchable material, such as silicon oxide, is then grown over the grooved top planar surface. A layer of doped silicon is grown over the silicon oxide layer to define a pair of V-shaped members opposite the pair of grooves. The silicon layer is then partially etched to form a second plate connected to the silicon layer through a pair of V-shaped members. Both the second plate and the pair of V-shaped members are then suspended over the first capacitive plate by sacrificially etching a portion of the selectively etchable layer. Electronic circuitry is then coupled to both the doped silicon layer and the doped substrate to detect changes in capacitance between the first and second plates in response to an applied force, such as airflow, to be measured. 2553L

600528

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