Method for fabricating a solid-state imaging device using...

Details Method for fabricating a solid-state imaging device using... Method for fabricating a solid-state imaging device using...

H - Electricity

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H01L 27/14 (2006.01) H01L 27/146 (2006.01)

Patent

CA 1153091

-1- Abstract: The invention provides a method for fabricating a solid- state imaging device using a photoconductive film. In the method, a photoconductive material is deposited onto a scanner IC by the use of a shield plate, the scanner IC including vertical switching MOS transistors and horizontal switching MOS transistors arrayed in the form of a matrix and vertical and horizontal scanning shift registers for scanning the vertical and horizontal switching MOS transistors respectively, the shield plate having an opening correspond- ing to a vertical switching MOS transistor array area. In this way, the photoconductive film can be formed only on the correct areas without the use of chemical etchants.

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