H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/142
H01L 21/22 (2006.01) H01L 21/265 (2006.01) H01L 21/331 (2006.01) H01L 21/74 (2006.01)
Patent
CA 1086867
ABSTRACT OF THE DISCLOSURE Defect formations and unwanted indiffusions caused by residual impurity products is prevented in a semiconductor fabrication method which includes the step of forming a composite mask which simultaneously defines for instance base, collector and diffusion isolation openings. After these openings are defined a thin protective layer of silicon dioxide is grown over the exposed area and remains there throughout the remainder of the doping process which includes the steps of selectively covering areas which are not to be doped with photoresist and thereafter ashering the photoresist to remove it in preparation for the next ion implantation step. The thin protective layer of silicon dioxide protects nonselected areas against residual impurity products formed during removal of the photoresist. -12-
261440
Signetics Corporation
Van Steinburg C.e.
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