Method for fabricating silicon oxynitride

C - Chemistry – Metallurgy – 01 – B

Patent

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C01B 15/14 (2006.01) B05D 3/02 (2006.01) C01B 21/082 (2006.01) C04B 33/32 (2006.01) C04B 35/597 (2006.01) C23C 16/30 (2006.01)

Patent

CA 2297329

A method for making silicon oxynitride comprising providing a vaporous gas stream of a compound selected from the group consisting of silazanes and siloxazanes. An enclosed, heated reaction site is also provided. The vaporous gas stream is delivered to the enclosed, heated reaction site in which the levels of oxygen are strictly controlled to promote the formation of silicon oxynitride particles.

L'invention concerne un procédé de fabrication d'oxynitrure de silicium, qui consiste à prévoir un courant de gaz en phase vapeur d'un composé choisi dans le groupe composé de silazanes et de siloxazanes. Un site de réaction chauffé et fermé est également prévu. Le courant de gaz en phase vapeur est envoyé dans le site de réaction chauffé et fermé dans lequel les taux d'oxygène sont rigoureusement dirigés de sorte que des particules d'oxynitrure de silicium soient formées.

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