C - Chemistry – Metallurgy – 04 – B
Patent
C - Chemistry, Metallurgy
04
B
C04B 35/565 (2006.01) B29C 35/08 (2006.01) B29C 41/00 (2006.01) B29C 67/00 (2006.01) C04B 35/64 (2006.01)
Patent
CA 2429960
The present invention includes a method for fabricating Si/SiC parts for use in the microelectronics manufacturing industry. The method includes providing a SiC powder. The method also includes providing a polymer binder and mixing the SiC powder and the polymer binder to form a part using an SLS process.
L'invention concerne un procédé permettant de produire des composants Si/SiC destinés à être utilisés dans la production micro-électronique industrielle. Ce procédé consiste à prendre une poudre de SiC et un liant polymère et à mélanger la poudre de SiC et le liant polymère afin de former un composant au moyen d'un processus de frittage sélectif par laser (SLS).
Beaman Joseph J.
Bourell David L.
Park Seok-Min
Wang Hong Yun
Sim & Mcburney
The Board Of Regents Of The University Of Texas System
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