C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 16/513 (2006.01) C23C 16/30 (2006.01) C23C 16/452 (2006.01) C23C 16/56 (2006.01)
Patent
CA 2670809
A method for forming a film on a substrate comprising : heating a solid organosilane source in a heating chamber to form a gaseous precursor; transferring the gaseous precursor to a deposition chamber; and reacting the gaseous precursor using an energy source to form the film on the substrate. The film comprises Si and C, and optionally comprises other elements such as N, O, F, B, P, or a combination thereof.
L'invention concerne un procédé de formation d'un film sur un substrat, comprenant les opérations consistant à: chauffer une source d'organosilane solide dans une chambre de chauffage pour former un précurseur gazeux; transférer le précurseur gazeux dans une chambre de dépôt; et faire réagir le précurseur gazeux à l'aide d'une source d'énergie pour former le film sur le substrat. Le film comprend du Si et du C, et comprend éventuellement d'autres éléments tels que N, O, F, B, P ou une combinaison de ceux-ci.
Allen Sebastien
Awad Yousef
Davies Michael
El Khakani My Ali
Gaumond Alexandre
Sixtron Advanced Materials Inc.
Smart & Biggar
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