Method for forming a narrow dimensioned region on a body

Details Method for forming a narrow dimensioned region on a body Method for forming a narrow dimensioned region on a body

H - Electricity

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H01L 21/302 (2006.01) H01L 21/033 (2006.01) H01L 21/762 (2006.01) H01L 21/763 (2006.01) H01L 21/768 (2006.01)

Patent

CA 1130013

METHOD FOR FORMING A NARROW DIMENSIONED REGION ON A BODY Abstract A method for forming a narrow dimensioned, for example, submicron, region on a silicon body that involves forming on the silicon body regions having substantially horizontal surfaces and substantially vertical surfaces. A layer of a very narrow dimension is formed both on the substantially horizontal and substantially vertical surfaces. Reactive ion etching is applied to the layer to substantially remove the horizontal layer while leaving the vertical layer substantially intact. The vertical layer dimension is adjusted depending upon the original thickness of the layer applied. FI9-78-022

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