Method for forming a resist pattern

Details Method for forming a resist pattern Method for forming a resist pattern

G - Physics

03

F

G03F 7/36 (2006.01) G03F 7/033 (2006.01) G03F 7/20 (2006.01) G03F 7/26 (2006.01)

Patent

CA 2069228

Abstract of the disclosure A method for forming a resist pattern comprising applying onto a base plate a resinous composition comprising a compound capable of generating an acid when irradiated with actinic rays to obtain a photosensitive layer, exposing the thus formed layer through a pattern mask to actinic rays, applying onto the whole surface of the said layer an alkoxysilane gas and subjecting the thus treated layer to dry etching to remove unexposed area of said layer to dry etching to remove unexposed area of said layer. By the adoption of the present method, a very fine resist pattern which is useful for the preparation of semiconductor element, magnetic bubble memory element and the like, can be easily and economically prepared.

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