H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/178
H01L 21/34 (2006.01) H01L 21/318 (2006.01)
Patent
CA 1141870
-23- METHOD FOR FORMING AN INSULATING FILM ON A SEMICONDUCTOR SUBSTRATE SURFACE ABSTRACT In a method for forming an insulating film on a semiconductor substrate surface, the silicon nitride of the insulating film has been formed by a plasma CVD or a direct nitridation. In the present invention, a gas plasma of a nitrogen-containing gas is generated in a direct nitridation reaction chamber, and the semiconductor silicon body is heated to a temperature of from approximately 800 to approximately 1300°C within the gas plasma atmosphere, thereby forming the silicon nitride film. The resulting silicon nitride film has a dense structure and a low oxygen concentration and a thick silicon nitride film is formed in a short period of direct nitridation of silicon.
347175
Arakawa Hideki
Ishikawa Hajime
Ito Takashi
Nozaki Takao
Shinoda Masaichi
Fujitsu Limited
Mcfadden Fincham
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