H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/178, 148/2.1
H01L 21/205 (2006.01) C23C 16/04 (2006.01) C23C 16/24 (2006.01) C23C 16/44 (2006.01) C30B 25/00 (2006.01) C30B 25/18 (2006.01) H01L 21/20 (2006.01)
Patent
CA 1330191
ABSTRACT OF THE DISCLOSURE A method for forming a crystal comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (SNDS) with small nucleation density and a nucleation surface (SNDL) exposed from said nonnucleation surface having a sufficiently small area for a crystal growing only from a single nucleus and having a greater nucleation density (NDL) than the nucleation density (NDS) of said non- nucleation surface (SNDS), thereby growing a single crystal from said single nucleus.
533332
Hirai Yutaka
Matsuyama Jinsho
Sakai Akira
Ueki Masao
Canon Kabushiki Kaisha
Ridout & Maybee Llp
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