C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/1
C30B 25/18 (2006.01) C30B 23/02 (2006.01) C30B 25/02 (2006.01) C30B 25/10 (2006.01) H01L 21/20 (2006.01) H01L 21/205 (2006.01) H01L 29/78 (2006.01)
Patent
CA 1336949
A method for forming a crystal, which comprises applying a crystal forming treatment on a substrate having a free surface on which a deposition surface (SNDS) with a small nucleation density and a deposition surface (SNDL) having a sufficinetly small area for crystal growth only from a single nucleus and having a greater nucleation density (NDL) than the nucleation density (NDS) of said deposition surface (SNDS) are arranged adjacent to each other, thereby growing a single crystal from said single nucleus.
532957
Naruse Yasuhiro
Yonehara Takao
Canon Kabushiki Kaisha
Ridout & Maybee Llp
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