H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/178, 148/2.1
H01L 21/20 (2006.01) C23C 16/04 (2006.01) C23C 16/24 (2006.01) C23C 16/44 (2006.01) C30B 25/04 (2006.01) C30B 25/18 (2006.01) H01L 21/205 (2006.01)
Patent
CA 1337170
A method for forming a crystalline deposited film comprises introducing a gaseous starting material for formation of deposited film and a gaseous halogenic oxidizing agent having the property of oxidative action on said starting material into a film forming space in which a substrate having a free surface with a non-nucleation surface (SNDS) with smaller nucleation density and a nucleation surface (SNDL) having sufficiently small area for crystal growth from only a single nucleus and having greater nucleation density (NDL) than the nucleation density (NDS) of said non-nucleation surface (SNDS) being arranged adjacent thereto is previously arranged, thereby effecting contact between said materials to form a plurality of precursors containing precursors under excited state, forming a single crystal on said nucleation surface (SNDL) with at least one precursor of these precursors being as the source for feeding the constitutent element of the deposited film and permitting a single crystal to grow from said nucleus.
533330
Hirai Yutaka
Matsuyama Jinsho
Sakai Akira
Ueki Masao
Canon Kabushiki Kaisha
Ridout & Maybee Llp
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