Method for forming p-n junctions

Details Method for forming p-n junctions Method for forming p-n junctions

H - Electricity

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345/22

H01L 31/04 (2006.01) H01L 21/225 (2006.01) H01L 21/268 (2006.01) H01L 31/18 (2006.01)

Patent

CA 1080835

METHOD FOR FORMING P-N JUNCTIONS ABSTRACT OF THE DISCLOSURE This invention is an improved method for preparing p-n junction devices, such as diodes and solar cells. High-quality junctions are prepared by effecting laser-diffusion of a selected dopant into silicon by means of laser pulses having a wavelength of from about 0.3 to 1.1 µm, an energy area density of from about 1.0 to 2.0 J/cm2, and a duration of from about 20 to 60 nanoseconds. Initially, the dopant is deposited on the silicon as a superficial layer, preferably one having a thickness in the range of from about 50 to 100 A. Depending on the application, the values for the above-mentioned pulse parameters are selected to produce melting of the silicon to depths in the range from about 1000 A to 1 µm. The invention has been used to produce solar cells having a one-sun conversion efficiency of 10.6%, these cells having no antireflective coating or back-surface fields.

331185

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