H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/176
H01L 21/265 (2006.01) H01L 21/033 (2006.01) H01L 21/3215 (2006.01) H01L 29/08 (2006.01) H01L 29/49 (2006.01)
Patent
CA 1112374
A METHOD FOR FORMING SELF-ALIGNED FIELD EFFECT DEVICE BY ION IMPLANTATION Abstract of the Disclosure A method is provided for making a field effect transistor which comprises forming a layer of an ion beam making material on the surface of a semiconductor body of one-type conductivity. The layer has at least two adjacent aper- tures. At least a portion of the masking layer between these aper- tures and in contact with the semiconductor body surface is made of an electrically insulative material if an isolated gate field effect transistor is desired. Then a beam of ions of opposite-type conductivity is directed at the mask body at an energy and dosage sufficient to form two buried regions of opposite-type conductivity fully enclosed within said one-type body respectively beneath these two apertures. Finally, sufficient heat is applied so that the two buried regions diffuse upward until they extend respec- tively to the surface of the semiconductor body beneath the two apertures; the masking material must have a melt- ing point above the temperature of the diffusion step.
307067
Gowling Lafleur Henderson Llp
International Business Machines Corporation
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