Method for forming semiconductor thin film

Details Method for forming semiconductor thin film Method for forming semiconductor thin film

C - Chemistry, Metallurgy

23

C

148/2.1, 204/96.

C23C 16/22 (2006.01) C23C 16/24 (2006.01) C23C 16/50 (2006.01) C23C 16/517 (2006.01) C30B 25/00 (2006.01) H01L 21/365 (2006.01)

Patent

CA 2014540

Abstract of the Disclosure A method for forming an amorphous semiconductor thin film on a substrate, which comprises preparing a reactor fitted with at least a high-frequency electrode for generating glow discharge, applying an A.C. voltage to the electrode, applying a D.C. voltage to the elec- trode independently from the A.C. voltage, feeding a reactive gas into the reactor to generate glow discharge of the reactive gas and maintain it, and forming the semiconductor thin film on the substrate.

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