Method for forming shottky diode

Details Method for forming shottky diode Method for forming shottky diode

H - Electricity

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356/58

H01L 21/329 (2006.01) H01L 21/04 (2006.01) H01L 21/20 (2006.01) H01L 29/16 (2006.01) H01L 29/872 (2006.01)

Patent

CA 2030825

A method for forming a diode provided with electrodes and a semiconductive layer comprises applying ion beam irradiation to a substrate having a protruding portion at a desired position for monocrystalline diamond formation and subjected to surface modification, and effecting a process for diamond crystal growth on the substrate.

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