Method for gettering contaminants in monocrystalline silicon

Details Method for gettering contaminants in monocrystalline silicon Method for gettering contaminants in monocrystalline silicon

C - Chemistry, Metallurgy

30

B

356/196, 148/3.4

C30B 1/00 (2006.01) H01L 21/306 (2006.01) H01L 21/316 (2006.01) H01L 21/322 (2006.01)

Patent

CA 1039629

METHOD FOR GETTERING CONTAMINANTS IN MONOCRYSTALLINE SILICON Abstract of the Disclosure A method for removing fast diffusing metal contaminants from a monocrystalline silicon body by (1) anodizing at least one side of the body in an aqueous liquid bath under conditions that result in the formation of a porous silicon surface layer, (2) annealing the resultant structure in a non-oxidizing environment, and (3) exposing the body to an oxidizing environment to oxidize the porous silicon layer to SiO2, or alternatively forming a capping layer over the porous silicon layer.

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