Method for growing an .alpha.-sic bulk single crystal

Details Method for growing an .alpha.-sic bulk single crystal Method for growing an .alpha.-sic bulk single crystal

C - Chemistry, Metallurgy

30

B

C30B 23/06 (2006.01) C30B 29/36 (2006.01)

Patent

CA 2368380

The invention relates to a method for growing an .alpha.-SiC bulk single crystal, in which the bulk single crystal is formed from an SiC gas phase by deposition of SiC on an SiC seed crystal (1). To enable an SiC bulk single crystal of the 15R type to be grown reproducibly and without restricting the seed crystal, the deposition takes place under a uniaxial tensile strength which includes a predetermined angle (5) with the [0001] axis (2) of the bulk single crystal, so that a rhombohedral crystal is formed.

L'invention concerne un procédé de croissance d'un monocristal volumique, selon lequel le monocristal volumique est obtenu à partir d'une phase gazeuse de carbure de silicium, par dépôt du carbure de silicium sur un germe cristallin de carbure de silicium (1). Afin de pouvoir obtenir une croissance d'un monocristal volumique de carbure de silicium de type 15R, de manière reproductible et sans restriction, le dépôt intervient sous l'effet d'une contrainte de traction uniaxiale qui forme un angle prédéfini avec l'axe [0001] (2) du monocristal volumique, de manière à former un cristal rhomboédrique.

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