C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/1.6
C30B 13/20 (2006.01) C30B 13/00 (2006.01) C30B 13/08 (2006.01) C30B 29/42 (2006.01)
Patent
CA 1228525
ABSTRACT OF THE DISCLOSURE The present invention provides a method for fabricating a GaAs single crystal by relying on a floating zone technique in a closed type cylinder charged with a GaAs polycrystal and an adjacently located GaAs single seed crystal, in which: an As container charged with As and communicating with the interior of said cylinder supplies pressurized As vapor into said cylinder, said As container is heated to a temperature sufficient to ensure that an optimum As vapor pressure of PAS ? 2.6 x 106 exp (-1.05eV/kT) Torr is applied to a melt region located at a boundary between said GaAs single seed crystal and said GaAs polycrystal in said cylinder to satisfy stoichiometry of the crystal to be grown, said melt region is heated to a temperature set at or somewhat higher that the melting point of GaAs, a continuous temperature gradient is established in a region of said cylinder leading from said As container to said GaAs polycrystal and to said GaAs single seed crystal.
434887
Marks & Clerk
Zaidan Hojin Handotai Kenkyu Shinkokai
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