C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 23/06 (2006.01) C30B 29/38 (2006.01)
Patent
CA 2646139
A method for growing a Group III nitride semiconductor crystal is provided with the following steps: First, a chamber including a heat-shielding portion for shielding heat radiation from a material 13 therein is prepared. Then, material 13 is arranged on one side of heat-shielding portion in chamber. Then, by heating material to be sublimated, a material gas is deposited on the other side of heat-shielding portion in chamber so that a Group III nitride semiconductor crystal is grown.
Miyanaga Michimasa
Mizuhara Naho
Nakahata Hideaki
Satoh Issei
Takeuchi Hisao
Marks & Clerk
Sumitomo Electric Industries Ltd.
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