Method for growing semiconductor crystal

Details Method for growing semiconductor crystal Method for growing semiconductor crystal

H - Electricity

01

L

356/178, 356/192

H01L 21/02 (2006.01) C23C 16/30 (2006.01) C30B 25/02 (2006.01) C30B 25/14 (2006.01) H01L 21/205 (2006.01)

Patent

CA 1091817

ABSTRACT OF THE DISCLOSURE: When a highly resistive GaAs film doped with a metal impurity such as Fe, Ni or Cr is epitaxially grown, a metallo- cene of this metal impurity such as Fe(C5H5)2, Cr(C5H5)2, or Ni(C5H5)2, or a derivative of this metallocene is employed as a starting material of this impurity. Even at room temperature or a temperature lower than room temperature a metallocene or a derivative thereof has such high vapor pressure as to per- mit the epitaxial growth of a semi-insulating film so that heating of a line for feeding an impurity into a reaction tube may be eliminated and consequently an epitaxial system may be much simplified. Furthermore, introduction of the impurity into the reaction tube may be instantaneously started or stopped by opening or closing a stop valve inserted into the feed line so that the impurity distribution may be sharply changed from one semi-insulating epitaxially grown film to another.

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