Method for growing single crystal

Details Method for growing single crystal Method for growing single crystal

C - Chemistry, Metallurgy

30

B

148/1.2

C30B 15/00 (2006.01) C30B 15/12 (2006.01) C30B 15/14 (2006.01) C30B 15/20 (2006.01) C30B 15/22 (2006.01)

Patent

CA 2012323

-21- ABSTRACT OF THE DISCLOSURE In a single-crystal growth method disclosed herein, a melt is first prepared in a container having a cylindrical wall. The container is such that at least the inner peripheral surface of the cylindrical wall is formed of a material which is not wettable to the melt. A seed is then immersed in the melt and a single crystal rod formed on the seed is pulled in such a manner as to be coaxial with the cylindrical wall. The distance between the single crystal rod and the inner peripheral surface is set to a prescribed value G, so that the melt adjacent to the inner peripheral surface is formed into a prescribed meniscus shape. The temperature distribution at the melt surface is controlled to maintain the meniscus shape between the single crystal rod and the inner peripheral surface at an equilibrium state to thereby control the diameter of the single crystal rod.

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