H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/163
H01L 21/265 (2006.01) C03C 23/00 (2006.01) H01L 21/28 (2006.01) H01L 21/3115 (2006.01)
Patent
CA 1038504
METHOD FOR IMPROVING DIELECTRIC BREAKDOWN STRENGTH OF INSULATING-GLASSY-MATERIAL LAYER OF A DEVICE INCLUDING ION IMPLATATION THEREIN Abstract of the Disclosure It has been discovered for the practice of this disclosure that a particular ion radiation treatment of amorphous SiO2 thin film, with a subsequent annealing procedure, improves the dielectric break- down property of the film. The treated SiO2 film is found to be sub- stantially more dense than a comparable untreated SiO2 film. It is theorized for the practice of this disclosure that the physical mechan- ism which produces the densification of the SiO2 film may be respon- sible for the enhanced dielectric properties of the film. Such an im- proved film is especially useful as the gate insulator layer in an in- sulated-gate electrode field-effect transistor device, and as an insula- ting layer for electrically separating two metallic films in a thin film integrated circuit. Such SiO2 thin films are useful in integrated circuit technology because the electrical insulation property thereof is considerably improved, e.g., in metal-oxide-semiconductor field ef- fect devices in which the gate insulation is relatively thin, e.g. less than 500.ANG., and in metallic magnetic-bubble devices in which a thin SiO2 layer is used to separate the sense element from the conductive magnetic film. - 1 -
247395
Baglin John E.
Distefano Thomas H.
Tu King-Ning
International Business Machines Corporation
Na
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