C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 14/56 (2006.01)
Patent
CA 2365902
A method is described for increasing the yield in processes of deposition of thin layers on substrates by contacting activated getter devices with the atmosphere of process chambers when no substrates are processed and when the pressure of reactive gasses in the chambers is below about 10 -3 mbar, by adopting the procedures and the equipments already in the chambers for handling and heating the manufacturing substrates. The method is particularly useful when applied in sequences of operations (1; 2; 3; 4) comprised between opening of the process chambers and beginning of the manufacturing processes. Getter devices (50; 60; 70) are also described which are suitable to be used in the method.
L'invention concerne un procédé permettant d'augmenter le rendement de processus destinés à former des dépôts de fines couches sur des substrats, ce procédé consistant tout d'abord à mettre des dispositifs getter activés en contact avec l'atmosphère de chambres de traitement, et ce alors que celles-ci ne traitent aucun substrat et que la pression de gaz réactifs dans ces chambres est inférieure à 10<-3> mbar environ, puis à employer les procédures et équipements de manipulation et de chauffe des substrats fabriqués dans ces chambres. Le procédé de cette invention est particulièrement utile lorsqu'il s'applique à des opérations successives (1; 2; 3; 4), qui se déroulent entre l'ouverture desdites chambres de traitement et le début des processus de fabrication. Enfin, cette invention concerne des dispositifs getter (50; 60; 70) aptes à être utilisés selon ce procédé.
Conte Andrea
Mazza Francesco
Moraja Marco
Gowling Lafleur Henderson Llp
Saes Getters S.p.a.
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