Method for locally modifying electronic and optoelectronic...

Details Method for locally modifying electronic and optoelectronic... Method for locally modifying electronic and optoelectronic...

H - Electricity

01

L

H01L 33/02 (2010.01)

Patent

CA 2411331

An electronic or optoelectronic device fabricated from a crystalline material in which a parameter of a bandgap characteristic of said crystalline material has been modified locally by introducing distortions on an atomic scale in the lattice structure of said crystalline material and the electronic and/or optoelectronic parameters of said device are dependent on the modification of said bandgap is exemplified by a radiation emissive optoelectronic semiconductor device which comprises a junction (10) formed from a p-type layer (11) and an n-type layer (12), both formed from indirect bandgap semiconductor material. The p-type layer (11) contains an array of dislocation loops which create a strain field to confine spatially and promote radiative recombination of the charge carriers.

L'invention porte sur un dispositif électronique ou optoélectronique fait d'un matériau cristallin dont un paramètre de la caractéristique de la largeur de bande interdite a été modifié localement par introduction de distorsions à l'échelle atomique dans la structure du réseau dudit matériau et dont les paramètres électroniques ou optoélectroniques dépendent des modifications de la largeur de bande interdite, ce qui est illustré par un dispositif semi-conducteur optoélectronique émetteur de rayonnement comportant une jonction (10) entre une couche (11) de type p et une couche (12) de type n, toutes deux formées à partir d'un matériau semi-conducteur à structure de bande indirecte. La couche (11) de type p contient un réseau de boucles de dissociation créant un champ de contraintes confinant spatialement les porteurs de charges et en favorisant la recombinaison radiative.

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