C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 23/06 (2006.01) C30B 29/06 (2006.01) G02F 1/135 (2006.01) H01L 21/20 (2006.01) G02F 1/1368 (2006.01) H01L 29/784 (1990.01)
Patent
CA 2122118
- 9 - METHOD FOR LOW TEMPERATURE GROWTH OF EPITAXIAL SILICON AND DEVICES PRODUCED THEREBY Abstract A thin layer of epitaxial silicon is grown at low temperatures at or below 300°C by the steps of providing a substrate, forming an oriented dielectric buffer layer on the substrate and growing epitaxial silicon on the buffer layer. Preferably the substrate has a glass surface and the oriented buffer layer is cubic ZrO2. The buffer layer is preferably oriented by bombarding it with a directed ion beam while the buffer layer is being deposited on the substrate. For example, a buffer layer of (100) cubic ZrO2 can be grown at a temperature as low as 300°C. The oriented cubic ZrO2 is an excellent buffer for epitaxial silicon on glass due to a good match of lattice parameters with silicon and a good match of thermal expansion coefficients with glass. An oriented (100) silicon epitaxial film can then be grown on the epitaxial template provided by the buffer layer at a temperature as low as 250°C. This low temperature process for producing epitaxial films offers multiple advantages: (1) reduced silicon interfacial defect densities and enlarged grain size permitting improved thin film transistor performance due to a lowered "off" current; (2) higher electron mobility permitting the fabrication of integrated displays; (3) lower temperature processing permitting the use of inexpensive glass substrates such as borosilicates; (4) sufficiently low temperature processing to permit the use of new lightweight substrates such as glass-coated polymeric materials (glass-coated plastics) which can substantially reduce the weight of displays and thus enhance the portability of portable computers, video telephones, and personal communicators;and (5) the use of new buffer layers such as ZrO2 which can block the diffusion of Na ions from the substrate.
American Telephone And Telegraph Company
Kirby Eades Gale Baker
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