Method for making a carbide thin film thermistor

H - Electricity – 01 – L

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

356/107

H01L 37/00 (2006.01) H01C 7/04 (2006.01)

Patent

CA 1143865

TITLE OF THE INVENTION "METHOD FOR MAKING A CARBIDE THIN FILM THERMISTOR" ABSTRACT OF THE DISCLOSURE A method for making a carbide thin film thermistor which comprises providing an insulating substrate, forming at least one pair of electroconductive electrodes on the substrate in a desired pattern, and forming a carbide re- sistor film on the insulating substrate and the electro- conductive electrodes by a sputtering while leaving part of the electrodes to be exposed for external connections. A carbide target material is sputtered in an inert gas atmosphere containing a small amount of an impurity gas. The thermistor element is arbitrarily controlled to have a desired level of resistance by choice of the impurity gas, the amount of such gas and the mode of sputtering. Optionally, the element is trimmed to adjust its resistance accurately and is also hermetically sealed within a glass tube to prevent the element from being contaminated with harmful substances.

362125

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Method for making a carbide thin film thermistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making a carbide thin film thermistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making a carbide thin film thermistor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-265327

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.