H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 27/146 (2006.01) H01L 31/0216 (2006.01)
Patent
CA 2457905
The invention concerns a method for making a colour image sensor. The method comprises: forming, on the front surface of a semiconductor wafer (10), a series of active zones comprising image detection circuits and corresponding each to a respective image sensor, each active zone being surrounded with input/output connections (22); transferring the wafer by its front surface against the front surface of a support substrate (20); eliminating the major part of the thickness of the semiconductor wafer, leaving on the substrate a fine semiconductor film which has been thinned. Additionally, the method comprises: deposition and etching of coloured filter layers 818) on the thinned semiconductor wafer; prior to transferring the semiconductor wafer on the substrate, on the semiconductor wafer front surface metallized apertures (25) have been formed extending deeper than the elements of the image detecting circuits formed on the surface of the semiconductor wafer; and the thinning step comprises the stripping from the rear of the metallization (22) the metallized apertures.
L'invention concerne un procédé de fabrication d'un capteur d'image en couleurs. Le procédé comprend: la formation, sur la face avant d'une tranche semiconductrice (10), d'une serie de zones actives comportant des circuits de détection d'image et correspondant chacune à un capteur d'image respectif, chaque zone active étant entourée de plots d'entrée/sortie (22); le report de la tranche par sa face avant contre la face avant d'un substrat de support (20); l'élimination de la majeure partie de l'épaisseur de la tranche semiconductrice, laissant subsister sur le substrat une fine couche semiconductrice (30) comprenant les circuits de détection d'image. De plus, d'une part on dépose et on grave ensuite des couches de filtres colores (18) sur la tranche semiconductrice ainsi amincie, d'autre part, préalablement au report de la tranche semiconductrice sur le substrat, on a formé sur la face avant de la tranche semiconductrice des ouvertures métallisées (25) s'étendant plus profondément que les éléments des circuits de détection d'image formes à la surface de la tranche semiconductrice ; et l'étape d'amincissement comporte la mise à nu par l'arrière de la métallisation (22) des ouvertures métallisées.
Atmel Grenoble S.a.
E2v Semiconductors
Goudreau Gage Dubuc
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