Method for making a doped well in a semiconductor substrate

Details Method for making a doped well in a semiconductor substrate Method for making a doped well in a semiconductor substrate

H - Electricity

01

L

356/151

H01L 21/265 (2006.01) H01L 21/225 (2006.01) H01L 21/70 (2006.01) H01L 21/762 (2006.01) H01L 21/8238 (2006.01)

Patent

CA 1276316

METHOD FOR MAKING A DOPED WELL IN A SEMICONDUCTOR SUBSTRATE Abstract of the Disclosure In a method for making a doped well in a semiconductor substrate, a dopant is implanted directly into an exposed surface of a semiconductor substrate through an opening in a dopant absorbing coating and the substrate is heated to drive the implanted dopant further into the substrate. Because the dopant is implanted into an exposed surface of the substrate, oxidation and oxide etch steps used in conventional methods are eliminated. This method requires fewer steps than the conventional method, and is particularly applicable in the fabrication of CMOS devices.

569517

Affiliated with

Also associated with

Rating

Method for making a doped well in a semiconductor substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making a doped well in a semiconductor substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making a doped well in a semiconductor substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1292261