Method for making a semiconductor device

Details Method for making a semiconductor device Method for making a semiconductor device

H - Electricity

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L

356/149

H01L 21/84 (2006.01) H01L 21/8234 (2006.01) H01L 27/06 (2006.01)

Patent

CA 1164107

Abstract: A method for forming a semiconductor device includes the steps of forming an element site on a surface of a semiconductor substrate. A dopant is introduced into the semiconductor substrate at the element site to form a region. An oxide layer is formed over the element site. A layer of polysilicon is formed over a portion of the element site. An oxide layer is formed over the poly- silicon layer and the doped portion of the substrate exposed at the element site.

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