H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/02 (2006.01) H01L 29/04 (2006.01) H01L 29/15 (2006.01)
Patent
CA 2611283
A method for making a semiconductor device may include forming a superlattice including a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may also include performing at least one anneal prior to completing forming of the superlattice.
L'invention concerne un procédé pour la fabrication d'un dispositif à semi-conducteurs qui peut consister à former un réseau superposé comprenant une pluralité de groupes de couches empilés, chaque groupe de couches comprenant une pluralité de monocouches semi-conductrices de base empilées définissant une partie semi-conductrice de base et au moins une monocouche non semi-conductrice contrainte à l'intérieur d'un réseau cristallin de parties semi-conductrices de base adjacentes. Le procédé de l'invention peut également consister à pratiquer au moins un recuit avant d'achever la formation du réseau superposé.
Hytha Marek
Kreps Scott A.
Stephenson Robert John
Mears Technologies Inc.
Teitelbaum & Maclean
LandOfFree
Method for making a semiconductor device including... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for making a semiconductor device including..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making a semiconductor device including... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1980997