H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 31/101 (2006.01) H01L 21/00 (2006.01) H01L 31/08 (2006.01) H01L 31/18 (2006.01)
Patent
CA 2465882
The invention concerns a method for making a semiconductor photodetector, in particular in the low-energy UV-X domain, and a photodetector obtained by said method. The invention is characterized in that it consists in making a photodetecting element (22) in photodetecting semiconductor material, said element being provided with electrodes (24, 26). After making the photodetecting element and without impairing the electrodes, it consists in removing a surface layer of the photodetecting semiconductor material to produce a new surface layer having the electrical properties of said material volume.
Procédé de fabrication d'un photodétecteur semiconducteur, notamment dans le domaine UV-X de basse énergie, et photodétecteur obtenu par ce procédé. Selon l'invention, on fabrique un élément de photodétection (22) en matériau semiconducteur photodétecteur, cet élément étant muni d'électrodes (24, 26). Après la fabrication de l'élément de photodétection et sans altérer les électrodes, on enlève une couche superficielle du matériau semiconducteur photodétecteur pour créer une nouvelle couche superficielle ayant les propriétés électriques du volume de ce matériau.
Foulon Francois
Guizard Benoit
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