Method for making artificial layered high-t_ superconductors

Details Method for making artificial layered high-t_ superconductors Method for making artificial layered high-t_ superconductors

C - Chemistry, Metallurgy

30

B

148/2.4

C30B 29/22 (2006.01) C30B 23/08 (2006.01) C30B 25/02 (2006.01) H01L 39/12 (2006.01) H01L 39/24 (2006.01)

Patent

CA 1330193

ABSTRACT This is a method for making layered structures of artificial high-Tc superconductor compounds by which on top of a seed crystal (7) having a lattice structure matching the lattice structure of the superconductor compound to be made, oxide layers (4, 5, 6) of all constituent components are epitaxially grown in a predetermined sequence so as to create a sandwich structure not found in natural crystals. The epitaxial deposition of the constituent components is performed in a reaction chamber having evaporation facilities, inlets for metal-organic gases, and inlets for background gases including oxygen.

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