H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/178
H01L 21/42 (2006.01) H01L 21/027 (2006.01) H01L 21/285 (2006.01)
Patent
CA 1166765
FI 9-81-030 Method For Making Low Barrier Schottky Devices By The Electron Beam Evaporation Of Reactive Metals Abstract A method for making low barrier Schottky de- vices by the electron beam evaporation of a reactive metal such as tantalum, titanium, hafnium, tungsten, molybdenum, and niobium which is selectively de- posited at a semiconductor surface such as n-type silicon using a photresist mask. The method includes a series of steps during the deposition of the barrier metal for degassing the semiconductor substrate, photoresist mask, reactive metal charge and deposition chamber. More particularly, the method includes steps for preliminarily degassing the substrate, mask and surrounding chamber by infra red heating under vacuum followed by steps for preliminarily degassing the charge and surrounding chamber, while the substrate and mask are shielded by electron beam heating the charge while under vacuum. Thereafter, and prior to deposition, the substrate and mask are finally degassed by irradi- ation with X-rays produced by electron beam heating the charge to a temperature below evaporation for a predetermined time under vacuum. Upon further heating of the charge, the barrier metal is evapo- rated and deposited at the semiconductor substrate surface.
406239
Dalal Hormazdyar M.
Lowney John J.
International Business Machines Corporation
Saunders Raymond H.
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