G - Physics – 11 – C
Patent
G - Physics
11
C
356/140, 356/199
G11C 11/14 (2006.01) H01F 41/34 (2006.01) H01L 21/3205 (2006.01) H05K 3/24 (2006.01) H05K 3/10 (2006.01) H05K 3/38 (2006.01)
Patent
CA 1071761
Abstract of the Disclosure A method for making multilayer devices, such as magnetic bubble domain devices, which are comprised of a plurality of layers that are deposited using only a single critical masking step. A first metallic layer is deposited on a substrate including a magnetic bubble domain film, which may or may not have a nonmagnetic material thereon. A first resist layer is then applied, selectively exposed, and developed to expose at least two areas of the first metallic film. A thicker metallic layer is then deposited in the exposed areas, or is electroplated. After this, another resist layer is applied without deforming the pattern in the first layer, selectively exposed, and developed to protect certain areas of the thick metallic layer from subsequent formation of another metallic layer. During this subsequent formation, a second metallic film is formed using the first resist layer as a mask. After this, the resists are removed and the now uncovered portions of the original thin metallic layer are etched away. In a particular embodiment, a magnetic bubble domain chip is provided in which the second resist layer is used to protect the sensor region of the chip. The second resist layer need not be critically aligned as it only functions as a protect mask. Exposure and development of the second resist layer does not adversely affect the underlying metal layers. -1-
246915
Ahn Kie Y.
Hatzakis Michael
Powers John V.
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