Method for making substrates provided with a stack having...

B - Operations – Transporting – 32 – B

Patent

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B32B 17/10 (2006.01) C03C 17/36 (2006.01) G02B 5/28 (2006.01) H01L 31/00 (2006.01) H05B 3/86 (2006.01)

Patent

CA 2738225

The invention relates to a method for making substrates (10), in particular transparent glazing substrates, provided with a stack of thin layers including an alternation of n metal functional layers (40, 80, 120, 160), in particular functional layers containing silver or a silver-based metal alloy, and of (n+1) antireflection coatings (20, 60, 100, 140, 180), n being an integer > 3, each antireflection coating comprising at least one antireflection layer (24, 64, 104, 144, 184) so that each functional layer (40, 80, 120, 160) is arranged between two antireflection coatings (20, 60, 100, 140, 180), said stack of thin layers being deposited by a vacuum technique, and said stack being such that the thickness of at least two functional layers (40, 80, 120, 160) is different and that the thickness of the functional layers (40, 80, 120, 160) have a symmetry within the stack relative to the centre of the stack.

L'invention se rapporte à un procédé de fabrication de substrats (10) notamment de substrats verriers transparents, munis d'un empilement de couches minces comportant une alternance de n couches fonctionnelles (40, 80, 120, 160) métalliques, notamment de couches fonctionnelles à base d'argent ou d'alliage métallique contenant de l'argent, et de (n + 1) revêtements antireflet (20, 60, 100, 140, 180), avec n nombre entier > 3, chaque revêtement antireflet comportant au moins une couche antireflet (24, 64, 104, 144, 184), de manière à ce que chaque couche fonctionnelle (40, 80, 120, 160) soit disposée entre deux revêtements antireflet (20, 60, 100, 140, 180), ledit empilement de couches minces étant déposé par une technique sous vide, ledit empilement étant tel que l'épaisseur de deux couches fonctionnelles (40, 80, 120, 160) au moins sont différentes et les épaisseurs des couches fonctionnelles (40, 80, 120, 160) présentent une symétrie à l'intérieur de l'empilement par rapport au centre de l'empilement.

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