H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 31/032 (2006.01) H01L 31/18 (2006.01)
Patent
CA 2483584
The invention concerns a method for making thin-film CIGS which consists in: electrochemically depositing on a substrate a layer of stoichiometry close to CuInSe¿2?; then rapidly annealing said layer from a light source with pulses of sufficient power to recrystallize CIS. Advantageously, the electrodeposited elements are premixed. Thus, after the deposition step, a homogeneous matrix is obtained which can support sudden temperature increases during the rapid annealing.
La présente invention concerne la fabrication de CIGS en couches minces. On dépose sur substrat une couche de stoechiométrie voisine de CuInSe2, par électrochimie. On effectue ensuite un recuit rapide de cette couche à partir d'une source de lumière avec des impulsions de puissance suffisante pour recristalliser le CIS. Avantageusement, les éléments électrodéposés sont pré- mélangés. On obtient après l'étape de dépôt une matrice homogène qui peut supporter de brusques montées en température pendant le recuit rapide.
Ben-Farah Moez
Cowache Pierre
Grand Pierre Philippe
Guillemoles Jean-Francois
Guimard Denis
Centre National de La Recherche Scientifique (cnrs)
Electricite de France - Service National
Fetherstonhaugh & Co.
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