Method for making transistor structures having impurity...

Details Method for making transistor structures having impurity... Method for making transistor structures having impurity...

H - Electricity

01

L

356/142

H01L 21/265 (2006.01) H01L 21/033 (2006.01) H01L 21/266 (2006.01) H01L 21/321 (2006.01) H01L 29/10 (2006.01) H01L 29/735 (2006.01)

Patent

CA 1063731

Abstract of the Disclosure An extremely short channel Field Effect Transistor (FET) is made by making a first ion implant through a polysilicon mask aperture, converting the surface of the polysilicon into SiO2 to constrict the aperture size and then making a second ion implant of the opposite type impurity through the constricted aperture. The SiO2 growth effectively moves the edge of the mask by a small controlled distance. This permits a small controlled spacing between the two ion implants, which is used for defining an extremely short FET channel. Alternatively a bipolar transistor with a narrow base zone can be made by analogous processing. - i -

265883

Affiliated with

Also associated with

Rating

Method for making transistor structures having impurity... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making transistor structures having impurity..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making transistor structures having impurity... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-409861