Method for manufacture of a semiconductor device

Details Method for manufacture of a semiconductor device Method for manufacture of a semiconductor device

H - Electricity

01

L

356/165, 356/76

H01L 21/322 (2006.01) H01L 21/00 (2006.01) H01L 21/316 (2006.01) H01L 21/76 (2006.01) H01L 29/00 (2006.01)

Patent

CA 1052476

ABSTRACT OF THE DISCLOSURE A semiconductor device and method of making the same is disclosed having a surface passivation film of a polycrystalline silicon layer containing 2 to 45 atomic percent of oxygen atoms. The polycrystalline silicon layer is locally electrically insulated by oxidizing throughout the thickness of the layer. The local oxidizing treatment causes the polycrystalline or silicon layer to pattern. -1-

247703

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