Method for manufacturing a heterobipolar transistor

Details Method for manufacturing a heterobipolar transistor Method for manufacturing a heterobipolar transistor

H - Electricity

01

L

H01L 21/331 (2006.01) H01L 29/737 (2006.01)

Patent

CA 2191167

A method of fabricating an HBT using differential epitaxy. By using an emitter mask and an exside-inside spacer structure, a self-adjusting fabrication of emitter contact and base contact is carried out. The emitter contact layer is made from amorphous silicon. Since the entire process sequence is very temperature-stable and can be carried out at lower implantation energies than conventional methods, HBT's having a high layer quality can be fabricated by the method of the invention which is suitable for mass production and with which high oscillation frequencies can be accomplished.

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