Method for manufacturing a planar, self-aligned emitter-base...

Details Method for manufacturing a planar, self-aligned emitter-base... Method for manufacturing a planar, self-aligned emitter-base...

H - Electricity

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H01L 21/00 (2006.01) H01L 21/28 (2006.01) H01L 21/285 (2006.01) H01L 21/31 (2006.01) H01L 21/331 (2006.01) H01L 21/76 (2006.01) H01L 29/737 (2006.01)

Patent

CA 1283741

ABSTRACT OF THE DISCLOSURE A method for the manufacture of a planar, self-aligned emitter-base complex, whereby a semiconductor layer structure standard for hetero-bipolar transistors is first grown on a substrate, the base regions are subsequently etched through a mask technique and are provided with the base metallization and with a first dielectric layer and insulation implantates and spacers for electrical insulation of the base are manufactured, and, following thereupon, the emitter region is provided with the emitter metallization and with a third dielectric layer.

580968

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