Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

H - Electricity

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H01L 21/42 (2006.01) H01L 21/26 (2006.01) H01L 21/263 (2006.01) H01L 21/265 (2006.01) H01L 21/30 (2006.01) H01L 21/322 (2006.01) H01L 21/324 (2006.01) H01L 21/329 (2006.01) H01L 21/477 (2006.01) H01L 29/32 (2006.01) H01L 21/331 (2006.01) H01L 21/332 (2006.01) H01L 21/336 (2006.01)

Patent

CA 2357985

The present invention provides a method for manufacturing a semiconductor device having a junction area formed by doping with a first conductive and a second conductive dopant. According to the method of the present invention, a surface of the semiconductor device is irradiated by electron beams or charged particles having energy of 100 to 500 keV. After the irradiation by electron beams or charged particles, annealing in a hydrogen atmosphere is performed for the irradiated semiconductor device.

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