C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/3.2, 148/3.8
C30B 29/40 (2006.01) C30B 33/10 (2006.01) H01L 21/306 (2006.01)
Patent
CA 2006597
ABSTRACT OF THE DISCLOSURE A method for manufacturing a compound semiconductor device in which a mixed crystal layer containing a III-V group compound is formed on a substrate, characterized in that when a part of the mixed crystal. layer is subjected to etching by an etching liquid, the etching portion is subjected to etching while maintaining the state of not exposing light to the etching portion.
Ishii Masanori
Kogure Kazuo
Fujitsu Limited
Ridout & Maybee Llp
The Furukawa Electric Co. Ltd.
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