Method for manufacturing green light emitting biodes

Details Method for manufacturing green light emitting biodes Method for manufacturing green light emitting biodes

H - Electricity

01

L

345/50

H01L 33/00 (2006.01)

Patent

CA 1213028

ABSTRACT OF THE DISCLOSURE In a method of manufacturing pure green light emitting diodes, after an n-type GaP epitaxial layer with thickness larger than or equal to a value for which the density of dislocation on the surface becomes less than or equal to 1 x 104 cm-2 is grown on an n-type GaP substrate, a p-type GaP epitaxial layer is grown on the above n-type epitaxial layer. Even with the use of a GaP substrate with normal dislocation density, the den- sity of dislocation in the neighborhood of the p-n junc- tion becomes low and therefore GaP green light emitting diodes with high intensity of light emission is obtained.

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